In the harsh manufacturing environment of Silicon, Indium, Phosphide, and Gallium Arsenide based devices, sapphire is the preferred material.
Sapphire is preferred because of its combination of optical properties, physical strength, and resistance to impact, abrasion, heat, and chemicals.
The compound semiconductor market includes products that exploit the unique properties of group III-V and II-VI compounds for cutting edge electronics. The next generation of epitaxy-grown Gallium Nitride based devices will enable higher power, high frequency transistors, power switches, rectifiers, and RF/Microwave amplifiers and transmitters. Unforgiving of crystalline defects, these devices will demand the highest quality and most reliable single crystal products.
Evolving compound semiconductor solutions from Rubicon
Epitaxy-ready sapphire substrates
Optical polished sapphire substrates
Sapphire wafer carriers
• 4" diameter
• 5" diameter
• 6" diameter